WMJ60N60EM WAYON

Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Power dissipation: 403W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Pulsed drain current: 240A
Gate charge: 96nC
Polarisation: unipolar
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 600V

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Технічний опис WMJ60N60EM WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W, Type of transistor: N-MOSFET, Technology: WMOS™ EM, Power dissipation: 403W, Case: TO247-3, Mounting: THT, Kind of package: tube, Gate-source voltage: ±30V, On-state resistance: 60mΩ, Pulsed drain current: 240A, Gate charge: 96nC, Polarisation: unipolar, Drain current: 36A, Kind of channel: enhancement, Drain-source voltage: 600V.