WMJ69N30DMH WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 383nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 383nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 363.16 грн |
| 3+ | 320.48 грн |
| 4+ | 270.25 грн |
| 10+ | 255.11 грн |
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Технічний опис WMJ69N30DMH WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 300V, Drain current: 65A, Pulsed drain current: 260A, Power dissipation: 568W, Case: TO247-3, Gate-source voltage: ±20V, On-state resistance: 55mΩ, Mounting: THT, Gate charge: 383nC, Kind of package: tube, Kind of channel: enhancement.