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WMJ80N65C4 WAYON


Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис WMJ80N65C4 WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 45A; Idm: 245A; 410W, Type of transistor: N-MOSFET, Technology: WMOS™ C4, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 45A, Pulsed drain current: 245A, Power dissipation: 410W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 39mΩ, Mounting: THT, Gate charge: 103nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.

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WMJ80N65C4 Виробник : WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній