WMJ80N65F2 WAYON
Виробник: WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 26.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 858.30 грн |
| 3+ | 344.08 грн |
| 8+ | 324.93 грн |
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Технічний опис WMJ80N65F2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W, Type of transistor: N-MOSFET, Technology: WMOS™ F2, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 45A, Pulsed drain current: 245A, Power dissipation: 410W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 37mΩ, Mounting: THT, Gate charge: 26.2nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 190ns.