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WMJ80R260S WAYON



Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Mounting: THT
Pulsed drain current: 78A
Power dissipation: 227W
Gate charge: 39nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
On-state resistance: 255mΩ
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Технічний опис WMJ80R260S WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W, Mounting: THT, Pulsed drain current: 78A, Power dissipation: 227W, Gate charge: 39nC, Polarisation: unipolar, Technology: WMOS™ S, Drain current: 13A, Kind of channel: enhancement, Drain-source voltage: 800V, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Kind of package: tube, Case: TO247-3, On-state resistance: 255mΩ.