WMJ90N60F2 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Mounting: THT
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 430W
Polarisation: unipolar
Kind of package: tube
Gate charge: 142nC
Technology: WMOS™ F2
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 295A
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Mounting: THT
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 430W
Polarisation: unipolar
Kind of package: tube
Gate charge: 142nC
Technology: WMOS™ F2
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 295A
Case: TO247-3
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1162.83 грн |
| 2+ | 478.96 грн |
| 6+ | 452.90 грн |
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Технічний опис WMJ90N60F2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W, Mounting: THT, Drain-source voltage: 600V, Drain current: 50A, On-state resistance: 33mΩ, Type of transistor: N-MOSFET, Power dissipation: 430W, Polarisation: unipolar, Kind of package: tube, Gate charge: 142nC, Technology: WMOS™ F2, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 295A, Case: TO247-3.