WMJ90N65SR WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 183nC
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 608.73 грн |
| 3+ | 524.16 грн |
| 10+ | 499.84 грн |
| 30+ | 449.52 грн |
| 120+ | 425.20 грн |
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Технічний опис WMJ90N65SR WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W, Type of transistor: N-MOSFET, Technology: WMOS™ SR, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 60A, Power dissipation: 460W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 33mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 350A, Gate charge: 183nC.