WMJ90N65SR WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Mounting: THT
Drain-source voltage: 650V
Drain current: 60A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Gate charge: 183nC
Technology: WMOS™ SR
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 350A
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Mounting: THT
Drain-source voltage: 650V
Drain current: 60A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Gate charge: 183nC
Technology: WMOS™ SR
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 350A
Case: TO247-3
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 556.16 грн |
| 3+ | 415.82 грн |
| 7+ | 393.02 грн |
| 120+ | 382.80 грн |
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Технічний опис WMJ90N65SR WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W, Mounting: THT, Drain-source voltage: 650V, Drain current: 60A, On-state resistance: 33mΩ, Type of transistor: N-MOSFET, Power dissipation: 460W, Polarisation: unipolar, Kind of package: tube, Gate charge: 183nC, Technology: WMOS™ SR, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 350A, Case: TO247-3.