WMJ90R260S WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Drain-source voltage: 900V
Drain current: 10A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39.5nC
Technology: WMOS™ S
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 50A
Mounting: THT
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Drain-source voltage: 900V
Drain current: 10A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39.5nC
Technology: WMOS™ S
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 50A
Mounting: THT
Case: TO247-3
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Технічний опис WMJ90R260S WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W, Drain-source voltage: 900V, Drain current: 10A, On-state resistance: 0.26Ω, Type of transistor: N-MOSFET, Power dissipation: 310W, Polarisation: unipolar, Kind of package: tube, Gate charge: 39.5nC, Technology: WMOS™ S, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 50A, Mounting: THT, Case: TO247-3.