WMJ9N150D1 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 85.2nC
Drain current: 9A
On-state resistance: 2.9Ω
Pulsed drain current: 36A
Gate-source voltage: ±30V
Power dissipation: 320W
Drain-source voltage: 1.5kV
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 690.85 грн |
| 3+ | 512.71 грн |
| 10+ | 383.91 грн |
| 30+ | 345.68 грн |
| 120+ | 319.92 грн |
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Технічний опис WMJ9N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W, Mounting: THT, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Case: TO247-3, Kind of package: tube, Polarisation: unipolar, Gate charge: 85.2nC, Drain current: 9A, On-state resistance: 2.9Ω, Pulsed drain current: 36A, Gate-source voltage: ±30V, Power dissipation: 320W, Drain-source voltage: 1.5kV.