WMJ9N150D1 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Mounting: THT
Drain current: 9A
On-state resistance: 2.9Ω
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85.2nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 36A
Case: TO247-3
Drain-source voltage: 1.5kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Mounting: THT
Drain current: 9A
On-state resistance: 2.9Ω
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85.2nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 36A
Case: TO247-3
Drain-source voltage: 1.5kV
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 716.87 грн |
| 3+ | 531.74 грн |
| 4+ | 307.72 грн |
| 9+ | 290.18 грн |
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Технічний опис WMJ9N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W, Mounting: THT, Drain current: 9A, On-state resistance: 2.9Ω, Type of transistor: N-MOSFET, Power dissipation: 320W, Polarisation: unipolar, Kind of package: tube, Gate charge: 85.2nC, Technology: WMOS™ D1, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 36A, Case: TO247-3, Drain-source voltage: 1.5kV.