WMK043N10LGS WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 111.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 111.2nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 66.85 грн |
| 10+ | 58.55 грн |
| 19+ | 47.36 грн |
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Технічний опис WMK043N10LGS WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 145A, Pulsed drain current: 580A, Power dissipation: 208W, Case: TO220-3, Gate-source voltage: ±20V, On-state resistance: 4.5mΩ, Mounting: THT, Gate charge: 111.2nC, Kind of package: tube, Kind of channel: enhancement.