WMK080N10LG2 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 52.82 грн |
| 10+ | 38.62 грн |
| 31+ | 29.50 грн |
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Технічний опис WMK080N10LG2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 41A, Pulsed drain current: 328A, Power dissipation: 108.7W, Case: TO220-3, Gate-source voltage: ±20V, On-state resistance: 11mΩ, Mounting: THT, Gate charge: 30.8nC, Kind of package: tube, Kind of channel: enhancement.