WMK110N20HG2 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 345.38 грн |
| 4+ | 249.96 грн |
| 11+ | 236.60 грн |
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Технічний опис WMK110N20HG2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 125A, Pulsed drain current: 500A, Power dissipation: 347.2W, Case: TO220-3, Gate-source voltage: ±20V, On-state resistance: 11mΩ, Mounting: THT, Gate charge: 73.8nC, Kind of package: tube, Kind of channel: enhancement.