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WMK160N25JN WAYON

WMx160N25JN.pdf Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 580A; 416W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Power dissipation: 416W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 185nC
Reverse recovery time: 260ns
Pulsed drain current: 580A
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Технічний опис WMK160N25JN WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 580A; 416W; TO220-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 250V, Drain current: 96A, Power dissipation: 416W, Case: TO220-3, Gate-source voltage: ±20V, On-state resistance: 6.3mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 185nC, Reverse recovery time: 260ns, Pulsed drain current: 580A.