WMK220N20HG3 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 312.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 312.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
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Технічний опис WMK220N20HG3 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 78A, Pulsed drain current: 312A, Power dissipation: 312.5W, Case: TO220-3, Gate-source voltage: ±20V, On-state resistance: 22mΩ, Mounting: THT, Gate charge: 37nC, Kind of package: tube, Kind of channel: enhancement.