WMK4N65D1B WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14.5nC
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 112W
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.85 грн |
| 29+ | 14.46 грн |
| 50+ | 12.80 грн |
| 250+ | 11.47 грн |
Відгуки про товар
Написати відгук
Технічний опис WMK4N65D1B WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 4A, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 2.2Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 14.5nC, Technology: WMOS™ D1, Pulsed drain current: 16A, Power dissipation: 112W.