WMK53N65F2 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ F2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ F2
на замовлення 488 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 285.27 грн |
| 5+ | 216.16 грн |
| 12+ | 204.37 грн |
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Технічний опис WMK53N65F2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 26A; Idm: 90A; 350W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 26A, Pulsed drain current: 90A, Power dissipation: 350W, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 78mΩ, Mounting: THT, Gate charge: 58nC, Kind of package: tube, Kind of channel: enhancement, Technology: WMOS™ F2.