WMK80R260S WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Drain-source voltage: 800V
Drain current: 13A
On-state resistance: 255mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: WMOS™ S
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 78A
Mounting: THT
Case: TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Drain-source voltage: 800V
Drain current: 13A
On-state resistance: 255mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: WMOS™ S
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 78A
Mounting: THT
Case: TO220-3
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Технічний опис WMK80R260S WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W, Drain-source voltage: 800V, Drain current: 13A, On-state resistance: 255mΩ, Type of transistor: N-MOSFET, Power dissipation: 227W, Polarisation: unipolar, Kind of package: tube, Gate charge: 39nC, Technology: WMOS™ S, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 78A, Mounting: THT, Case: TO220-3.