WML10N80D1B WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
на замовлення 252 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 58.75 грн |
| 10+ | 45.32 грн |
| 50+ | 39.95 грн |
| 250+ | 36.00 грн |
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Технічний опис WML10N80D1B WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 10A, Power dissipation: 62.5W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 910mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 33nC, Pulsed drain current: 40A.