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WML18N20JN WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F052BC183460DF&compId=WMx18N20JN.pdf?ci_sign=fc2448d11187b1127b662e603dfa38eeb089f0c9 Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
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Технічний опис WML18N20JN WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP, Case: TO220FP, Mounting: THT, Reverse recovery time: 80ns, On-state resistance: 135mΩ, Drain current: 7A, Gate-source voltage: ±20V, Power dissipation: 36W, Pulsed drain current: 39A, Drain-source voltage: 200V, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: tube, Polarisation: unipolar, Gate charge: 7.2nC.