WML25N65EM WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 34W
Gate charge: 36nC
Gate-source voltage: ±30V
Pulsed drain current: 80A
Drain current: 13A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 34W
Gate charge: 36nC
Gate-source voltage: ±30V
Pulsed drain current: 80A
Drain current: 13A
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Технічний опис WML25N65EM WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W, Type of transistor: N-MOSFET, Technology: WMOS™ EM, Polarisation: unipolar, Drain-source voltage: 650V, Case: TO220FP, On-state resistance: 0.19Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Power dissipation: 34W, Gate charge: 36nC, Gate-source voltage: ±30V, Pulsed drain current: 80A, Drain current: 13A.