WML26N65F2 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
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Технічний опис WML26N65F2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A; 31W, Type of transistor: N-MOSFET, Technology: WMOS™ F2, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 10.5A, Pulsed drain current: 40A, Power dissipation: 31W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 0.21Ω, Mounting: THT, Gate charge: 22.1nC, Kind of package: tube, Kind of channel: enhancement.