WML28N65F2 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27.3nC
Pulsed drain current: 65A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27.3nC
Pulsed drain current: 65A
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис WML28N65F2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 31W, Type of transistor: N-MOSFET, Technology: WMOS™ F2, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 13A, Power dissipation: 31W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 0.19Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 27.3nC, Pulsed drain current: 65A.