WML4N90D1B WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 45W
Gate charge: 34nC
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 45W
Gate charge: 34nC
Technology: WMOS™ D1
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Технічний опис WML4N90D1B WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 4A, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 1.85Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 16A, Power dissipation: 45W, Gate charge: 34nC, Technology: WMOS™ D1.