WML80R350S WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.4A
Pulsed drain current: 56A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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Технічний опис WML80R350S WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W, Type of transistor: N-MOSFET, Technology: WMOS™ S, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 8.4A, Pulsed drain current: 56A, Power dissipation: 34W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 0.33Ω, Mounting: THT, Gate charge: 31nC, Kind of package: tube, Kind of channel: enhancement.