WMM020N10HGS WAYON
Виробник: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 2.2mΩ
Power dissipation: 390.6W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Case: TO263
Kind of channel: enhancement
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 175.18 грн |
| 5+ | 154.69 грн |
| 25+ | 135.56 грн |
| 100+ | 122.00 грн |
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Технічний опис WMM020N10HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W, Type of transistor: N-MOSFET, Kind of package: reel; tape, Mounting: SMD, Polarisation: unipolar, Gate charge: 255nC, On-state resistance: 2.2mΩ, Power dissipation: 390.6W, Gate-source voltage: ±20V, Drain-source voltage: 100V, Drain current: 280A, Pulsed drain current: 1120A, Case: TO263, Kind of channel: enhancement.