WMM023N08HGS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 270A; Idm: 1080A; 329W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 270A
Pulsed drain current: 1.08kA
Power dissipation: 329W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 270A; Idm: 1080A; 329W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 270A
Pulsed drain current: 1.08kA
Power dissipation: 329W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 797 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 98.19 грн |
| 25+ | 87.28 грн |
| 100+ | 78.05 грн |
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Технічний опис WMM023N08HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 270A; Idm: 1080A; 329W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 270A, Pulsed drain current: 1.08kA, Power dissipation: 329W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 2.6mΩ, Mounting: SMD, Gate charge: 145nC, Kind of package: reel; tape, Kind of channel: enhancement.