WMM028N10HG2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 245A; Idm: 780A; 278W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 245A
Pulsed drain current: 780A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 245A; Idm: 780A; 278W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 245A
Pulsed drain current: 780A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
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Технічний опис WMM028N10HG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 245A; Idm: 780A; 278W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 245A, Pulsed drain current: 780A, Power dissipation: 278W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 2.8mΩ, Mounting: SMD, Gate charge: 98nC, Kind of package: reel; tape, Kind of channel: enhancement.