
WMM040N15HG2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 126A
Pulsed drain current: 800A
Power dissipation: 378.7W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 126A
Pulsed drain current: 800A
Power dissipation: 378.7W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
2+ | 291.45 грн |
5+ | 207.18 грн |
12+ | 195.71 грн |
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Технічний опис WMM040N15HG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 126A, Pulsed drain current: 800A, Power dissipation: 378.7W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 4.6mΩ, Mounting: SMD, Gate charge: 74.3nC, Kind of package: reel; tape, Kind of channel: enhancement.