WMM048NV6HG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263
Case: TO263
Kind of package: reel; tape
Drain-source voltage: 65V
Drain current: 110A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Gate charge: 28.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 440A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263
Case: TO263
Kind of package: reel; tape
Drain-source voltage: 65V
Drain current: 110A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Gate charge: 28.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 440A
Mounting: SMD
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 64.43 грн |
| 8+ | 49.73 грн |
| 24+ | 38.46 грн |
| 25+ | 38.38 грн |
| 66+ | 36.36 грн |
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Технічний опис WMM048NV6HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263, Case: TO263, Kind of package: reel; tape, Drain-source voltage: 65V, Drain current: 110A, On-state resistance: 5.2mΩ, Type of transistor: N-MOSFET, Power dissipation: 104.2W, Polarisation: unipolar, Gate charge: 28.5nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 440A, Mounting: SMD.