WMM053N10HGS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263
Case: TO263
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 164.5W
Polarisation: unipolar
Gate charge: 82.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263
Case: TO263
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 164.5W
Polarisation: unipolar
Gate charge: 82.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 65.20 грн |
| 8+ | 50.27 грн |
| 24+ | 38.39 грн |
| 65+ | 36.32 грн |
Відгуки про товар
Написати відгук
Технічний опис WMM053N10HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263, Case: TO263, Kind of package: reel; tape, Drain-source voltage: 100V, Drain current: 120A, On-state resistance: 5.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 164.5W, Polarisation: unipolar, Gate charge: 82.5nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 480A, Mounting: SMD.