WMM120P06TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 183.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 183.8W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 183.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 183.8W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 730 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 70.33 грн |
| 15+ | 61.92 грн |
| 40+ | 58.10 грн |
| 100+ | 56.57 грн |
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Технічний опис WMM120P06TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 183.8W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -120A, Pulsed drain current: -480A, Power dissipation: 183.8W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 6.8mΩ, Mounting: SMD, Gate charge: 84nC, Kind of package: reel; tape, Kind of channel: enhancement.