WMM220N20HG3 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W; TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO263
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 78A
Gate charge: 37nC
On-state resistance: 22mΩ
Power dissipation: 312.5W
Gate-source voltage: ±20V
Pulsed drain current: 312A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W; TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO263
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 78A
Gate charge: 37nC
On-state resistance: 22mΩ
Power dissipation: 312.5W
Gate-source voltage: ±20V
Pulsed drain current: 312A
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 213.76 грн |
| 5+ | 187.46 грн |
| 6+ | 158.32 грн |
| 17+ | 149.65 грн |
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Технічний опис WMM220N20HG3 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W; TO263, Mounting: SMD, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: TO263, Kind of package: reel; tape, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 78A, Gate charge: 37nC, On-state resistance: 22mΩ, Power dissipation: 312.5W, Gate-source voltage: ±20V, Pulsed drain current: 312A.