WMM220N20HG3 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W; TO263
Case: TO263
Mounting: SMD
Drain-source voltage: 200V
Drain current: 78A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 312.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 312A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W; TO263
Case: TO263
Mounting: SMD
Drain-source voltage: 200V
Drain current: 78A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 312.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 312A
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 211.63 грн |
| 5+ | 185.51 грн |
| 6+ | 158.00 грн |
| 17+ | 149.35 грн |
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Технічний опис WMM220N20HG3 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W; TO263, Case: TO263, Mounting: SMD, Drain-source voltage: 200V, Drain current: 78A, On-state resistance: 22mΩ, Type of transistor: N-MOSFET, Power dissipation: 312.5W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 37nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 312A.