WMM240P10HG4 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -38A; Idm: -240A; 192.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -38A
Pulsed drain current: -240A
Power dissipation: 192.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -38A; Idm: -240A; 192.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -38A
Pulsed drain current: -240A
Power dissipation: 192.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 59.60 грн |
| 19+ | 50.19 грн |
| 51+ | 47.05 грн |
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Технічний опис WMM240P10HG4 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -38A; Idm: -240A; 192.3W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -38A, Pulsed drain current: -240A, Power dissipation: 192.3W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 26mΩ, Mounting: SMD, Gate charge: 64.6nC, Kind of package: reel; tape, Kind of channel: enhancement.