WMM26N60F2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 114.44 грн |
| 10+ | 95.89 грн |
| 11+ | 84.29 грн |
| 30+ | 79.65 грн |
| 250+ | 76.55 грн |
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Технічний опис WMM26N60F2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A, Type of transistor: N-MOSFET, Technology: WMOS™ F2, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 10.5A, Pulsed drain current: 40A, Power dissipation: 135W, Case: TO263, Gate-source voltage: ±30V, On-state resistance: 0.21Ω, Mounting: SMD, Gate charge: 22.1nC, Kind of package: reel; tape, Kind of channel: enhancement.