WMM30N25JN WAYON
Виробник: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 59W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 63A
Power dissipation: 59W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 133ns
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Технічний опис WMM30N25JN WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 59W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 250V, Drain current: 12A, Pulsed drain current: 63A, Power dissipation: 59W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 99mΩ, Mounting: SMD, Gate charge: 9.8nC, Kind of package: reel; tape, Kind of channel: enhancement, Reverse recovery time: 133ns.