WMM38N65FD WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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Технічний опис WMM38N65FD WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO263, Type of transistor: N-MOSFET, Technology: WMOS™ FD, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 38A, Power dissipation: 277W, Case: TO263, Gate-source voltage: ±30V, On-state resistance: 0.115Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement.