WMM80P04TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -80A; Idm: -320A; 92.6W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -80A
Pulsed drain current: -320A
Power dissipation: 92.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -80A; Idm: -320A; 92.6W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -80A
Pulsed drain current: -320A
Power dissipation: 92.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 61.92 грн |
| 9+ | 44.42 грн |
| 25+ | 37.18 грн |
| 27+ | 35.21 грн |
| 73+ | 33.24 грн |
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Технічний опис WMM80P04TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -80A; Idm: -320A; 92.6W; TO263, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -80A, Pulsed drain current: -320A, Power dissipation: 92.6W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 8.5mΩ, Mounting: SMD, Gate charge: 110nC, Kind of package: reel; tape, Kind of channel: enhancement.