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WMM85N20JN

WMM85N20JN WAYON

WMx85N20JN.pdf
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO263
Pulsed drain current: 240A
Power dissipation: 180W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO263
On-state resistance: 13.5mΩ
Reverse recovery time: 160ns
Mounting: SMD
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Мінімальне замовлення: 800 шт
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Технічний опис WMM85N20JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO263, Pulsed drain current: 240A, Power dissipation: 180W, Gate charge: 21nC, Polarisation: unipolar, Drain current: 50A, Kind of channel: enhancement, Drain-source voltage: 200V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: TO263, On-state resistance: 13.5mΩ, Reverse recovery time: 160ns, Mounting: SMD.