WMMB015N08HGS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 358A
Pulsed drain current: 1432A
Power dissipation: 347.2W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 358A
Pulsed drain current: 1432A
Power dissipation: 347.2W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 178.18 грн |
| 5+ | 156.83 грн |
| 8+ | 127.82 грн |
| 20+ | 120.76 грн |
Відгуки про товар
Написати відгук
Технічний опис WMMB015N08HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 358A, Pulsed drain current: 1432A, Power dissipation: 347.2W, Case: TO263-7, Gate-source voltage: ±20V, On-state resistance: 1.5mΩ, Mounting: SMD, Gate charge: 238nC, Kind of package: reel; tape, Kind of channel: enhancement.