WMMB020N10HG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 238A
Pulsed drain current: 952A
Power dissipation: 277.8W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 123.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 238A
Pulsed drain current: 952A
Power dissipation: 277.8W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 123.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 156.60 грн |
| 5+ | 137.56 грн |
| 9+ | 113.19 грн |
| 23+ | 106.90 грн |
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Технічний опис WMMB020N10HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 238A, Pulsed drain current: 952A, Power dissipation: 277.8W, Case: TO263-7, Gate-source voltage: ±20V, On-state resistance: 2.5mΩ, Mounting: SMD, Gate charge: 123.4nC, Kind of package: reel; tape, Kind of channel: enhancement.