WMMB020N10HG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Mounting: SMD
Pulsed drain current: 952A
Power dissipation: 277.8W
Gate charge: 123.4nC
Polarisation: unipolar
Drain current: 238A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO263-7
On-state resistance: 2.5mΩ
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 164.38 грн |
| 5+ | 144.25 грн |
| 25+ | 127.47 грн |
| 100+ | 114.89 грн |
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Технічний опис WMMB020N10HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W, Mounting: SMD, Pulsed drain current: 952A, Power dissipation: 277.8W, Gate charge: 123.4nC, Polarisation: unipolar, Drain current: 238A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: TO263-7, On-state resistance: 2.5mΩ.