WMN10N80M3 WAYON

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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement

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Технічний опис WMN10N80M3 WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO262, Type of transistor: N-MOSFET, Technology: WMOS™ M3, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 10A, Power dissipation: 85W, Case: TO262, Gate-source voltage: ±30V, On-state resistance: 1.03Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement.