WMO048NV6HG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 90A; Idm: 360A; 71.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 71.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 90A; Idm: 360A; 71.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 71.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 61.80 грн |
| 11+ | 36.55 грн |
| 25+ | 32.70 грн |
| 34+ | 27.67 грн |
Відгуки про товар
Написати відгук
Технічний опис WMO048NV6HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 90A; Idm: 360A; 71.4W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 90A, Pulsed drain current: 360A, Power dissipation: 71.4W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 5.2mΩ, Mounting: SMD, Gate charge: 28.5nC, Kind of package: reel; tape, Kind of channel: enhancement.