WMO048NV6LG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 90A; Idm: 360A; 71.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 71.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 90A; Idm: 360A; 71.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 71.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 51.64 грн |
| 13+ | 30.50 грн |
| 25+ | 27.35 грн |
| 42+ | 22.17 грн |
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Технічний опис WMO048NV6LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 90A; Idm: 360A; 71.4W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 90A, Pulsed drain current: 360A, Power dissipation: 71.4W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 5mΩ, Mounting: SMD, Gate charge: 35nC, Kind of package: reel; tape, Kind of channel: enhancement.