WMO04N65C2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
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Технічний опис WMO04N65C2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 3A, Power dissipation: 29W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 1.9Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Technology: WMOS™ C2.