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WMO060N10HGS

WMO060N10HGS WAYON


Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 420A; 138.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 105A
Power dissipation: 138.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 420A
Gate charge: 81.8nC
Kind of package: reel; tape
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Технічний опис WMO060N10HGS WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 420A; 138.9W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 105A, Power dissipation: 138.9W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 6mΩ, Mounting: SMD, Kind of channel: enhancement, Pulsed drain current: 420A, Gate charge: 81.8nC, Kind of package: reel; tape.