WMO060N10HGS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 420A; 138.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 105A
Pulsed drain current: 420A
Power dissipation: 138.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 81.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 420A; 138.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 105A
Pulsed drain current: 420A
Power dissipation: 138.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 81.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 84.65 грн |
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Технічний опис WMO060N10HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 420A; 138.9W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 105A, Pulsed drain current: 420A, Power dissipation: 138.9W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 6mΩ, Mounting: SMD, Gate charge: 81.8nC, Kind of package: reel; tape, Kind of channel: enhancement.