WMO099N10LGS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 268A; 89.3W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 268A
Power dissipation: 89.3W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 9+ | 53.19 грн |
| 13+ | 34.32 грн |
| 25+ | 32.31 грн |
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Технічний опис WMO099N10LGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 268A; 89.3W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 43A, Pulsed drain current: 268A, Power dissipation: 89.3W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 14mΩ, Mounting: SMD, Gate charge: 59nC, Kind of package: reel; tape, Kind of channel: enhancement.