WMO09N20DM WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252
Case: TO252
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 200V
Drain current: 9A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 80W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41.3nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252
Case: TO252
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 200V
Drain current: 9A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 80W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41.3nC
Kind of channel: enhancement
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 33.84 грн |
| 24+ | 16.48 грн |
| 26+ | 14.87 грн |
| 75+ | 12.03 грн |
| 206+ | 11.34 грн |
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Технічний опис WMO09N20DM WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252, Case: TO252, Mounting: SMD, Gate-source voltage: ±20V, Pulsed drain current: 36A, Drain-source voltage: 200V, Drain current: 9A, On-state resistance: 0.3Ω, Type of transistor: N-MOSFET, Power dissipation: 80W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 41.3nC, Kind of channel: enhancement.