WMO11N65C4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.1nC
Pulsed drain current: 19A
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.75 грн |
| 10+ | 43.21 грн |
| 25+ | 37.39 грн |
| 100+ | 34.07 грн |
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Технічний опис WMO11N65C4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W, Type of transistor: N-MOSFET, Technology: WMOS™ C4, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 4.8A, Power dissipation: 57W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 0.56Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 2.1nC, Pulsed drain current: 19A.