WMO11N65SR WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
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Технічний опис WMO11N65SR WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 63W, Type of transistor: N-MOSFET, Technology: WMOS™ SR, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 5.4A, Power dissipation: 63W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 0.6Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 19A, Gate charge: 13.7nC.