WMO12P06TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 62.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 62.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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Технічний опис WMO12P06TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 62.5W; TO252, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -20A, Pulsed drain current: -80A, Power dissipation: 62.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 0.11Ω, Mounting: SMD, Gate charge: 21.5nC, Kind of package: reel; tape, Kind of channel: enhancement.